SSRF30N20-400 23a, 200v, r ds(on) 400m n-ch enhancement mode power mosfet elektronische bauelemente 01-dec-2010 rev.a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications ar e dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provides higher efficiency and extends battery life. ? low thermal impedance copper leadframe ito-220 saves board space. ? fast switching speed. ? high performance trench technology. product summary SSRF30N20-400 v ds (v) r ds (on) (m ? ? i d (a) 200 400@v gs = 10v 23 1 450@v gs = 4.5v absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 200 v gate-source voltage v gs 20 v continuous drain current 1 i d @t c =25 23 a pulsed drain current 2 i dm 240 a continuous source current (diode conduction) 1 i s 90 a total power dissipation 1 p d @t c =25 300 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient 1 r ja 62.5 c / w maximum thermal resist ance junction-case r jc 0.5 c / w notes 1 package limited. 2 pulse width limited by maximum junction temperature. ? ? gate ? ? source ? ? drain ito-220 dimensions in millimeters a m j k l l g f b n d e c h ref. millimete r ref. millimete r min. max. min. max. a 15.00 15.60 h 3.00 3.80 b 9.50 10.50 j 0.90 1.50 c 13.00 min k 0.50 0.90 d 4.30 4.70 l 2.34 2.74 e 2.50 3.10 m 2.50 2.90 f 2.40 2.80 n ? ? ?
SSRF30N20-400 23a, 200v, r ds(on) 400m n-ch enhancement mode power mosfet elektronische bauelemente 01-dec-2010 rev.a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbo min. typ. max. unit test conditions static gate-threshold voltage v gs(th) 1 - - v v ds = v gs, i d = 250 a gate-body leakage i gss - - 100 na v ds = 0v, v gs = 20v zero gate voltage drain current i dss - - 1 a v ds = 160v, v gs = 0v - - 25 v ds = 160v,v gs = 0v,t j =55c on-state drain current 1 i d(on) 120 - - a v ds = 5v, v gs = 10v drain-source on-resistance 1 r ds(on) - - 400 m ? v gs = 10v, i d = 30 a - - 450 v gs = 4.5v, i d = 20 a forward transconductance 1 g fs - 30 - s v ds = 15v, i d = 30 a diode forward voltage v sd - 1.1 - v i s = 34 a, v gs = 0 v dynamic 2 total gate charge q g - 8.5 - nc v ds = 15 v v gs = 4.5 v i d = 90 a gate-source charge q gs - 3.3 - gate-drain charge q gd - 4.0 - turn-on delay time t d(on) - 18 - ns v dd = 25 v i d = 34 a v gen = 10 v r l = 25 ? rise time t r - 59 - turn-off delay time t d(off) - 37 - fall time t f - 9 - notes 1 pulse test pulse width Q 300 s, duty cycle Q 2 . 2 guaranteed by design, not s ubject to production testing.
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